Thermal neutron detection using Si detector and a boron implanted polyethylene converter

Author

Barelaud, B. ; Makovicka, L. ; Dubarry, B. ; Paul, D. ; Decossas, J.L. ; Vareille, J.C.

Author_Institution

Limoges Univ., France

fYear

1991

fDate

9-12 Sep 1991

Firstpage

77

Lastpage

80

Abstract

The development of semiconductor detector technology has led the authors to consider real time dosimetry. The study concerns the thermal neutron detection through (n,α) reaction on boron 10, with recording of secondary particles (α, ⁷Li) by a PIPS detector (passivated implanted Si detector). The authors compared theoretical estimates with experimental results from irradiations in CEN Cadarache. This results are given as the number of registered pulses per milliSievert per square centimeter

Keywords

dosimetry; elemental semiconductors; neutron detection and measurement; semiconductor counters; silicon; PIPS detector; Si detector; polyethylene converter; real time dosimetry; registered pulses; secondary particles; semiconductor detector technology; thermal neutron detection; Boring; Boron; Chromium; Detectors; Dosimetry; Estimation theory; Laboratories; Neutrons; Polyethylene; Polymers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on

Conference_Location

La Grande-Motte

Print_ISBN

0-7803-0208-7

Type

conf

DOI

10.1109/RADECS.1991.213604

Filename

213604