Title :
A multi Mrad hardened 8 bit/20 MHz flash ADC
Author :
Baille, F. ; Borel, G. ; Commère, B. ; Roy, F. ; Delmas, C. ; Terrier, C.
Author_Institution :
Thomson Composants Militaires et Spatiaux, Saint-Egreve, France
Abstract :
An 8-bit 20 MHz flash ADC using a radiation hardened SOI process is presented. The circuit is capable of operating at up to 20 MHz, even after a total dose exposure of 100 MRad (SiO2) (10 keV X-ray)
Keywords :
CMOS integrated circuits; X-ray effects; analogue-digital conversion; radiation hardening (electronics); 10 keV; 100E6 rad; flash ADC; radiation hardened SOI process; total dose exposure; Analog-digital conversion; Binary codes; CMOS logic circuits; CMOS technology; Clocks; Design optimization; Flip-flops; Master-slave; Radiation hardening; Read only memory;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213615
