• DocumentCode
    3149607
  • Title

    A multi Mrad hardened 8 bit/20 MHz flash ADC

  • Author

    Baille, F. ; Borel, G. ; Commère, B. ; Roy, F. ; Delmas, C. ; Terrier, C.

  • Author_Institution
    Thomson Composants Militaires et Spatiaux, Saint-Egreve, France
  • fYear
    1991
  • fDate
    9-12 Sep 1991
  • Firstpage
    271
  • Lastpage
    274
  • Abstract
    An 8-bit 20 MHz flash ADC using a radiation hardened SOI process is presented. The circuit is capable of operating at up to 20 MHz, even after a total dose exposure of 100 MRad (SiO2) (10 keV X-ray)
  • Keywords
    CMOS integrated circuits; X-ray effects; analogue-digital conversion; radiation hardening (electronics); 10 keV; 100E6 rad; flash ADC; radiation hardened SOI process; total dose exposure; Analog-digital conversion; Binary codes; CMOS logic circuits; CMOS technology; Clocks; Design optimization; Flip-flops; Master-slave; Radiation hardening; Read only memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
  • Conference_Location
    La Grande-Motte
  • Print_ISBN
    0-7803-0208-7
  • Type

    conf

  • DOI
    10.1109/RADECS.1991.213615
  • Filename
    213615
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3149607