Title :
A radiation-tolerant 8-bit flash A/D converter implemented in silicon-on-sapphire
Author_Institution :
Harris Semiconductor, Palm Bay, FL, USA
Abstract :
The use of silicon-on-sapphire processing to solve high-performance analog-to-digital conversion challenges provides the potential for radiation hardness as well. An eight-bit flash converter is described along with total dose radiation results
Keywords :
analogue-digital conversion; field effect integrated circuits; radiation hardening (electronics); SOS processing; analog-to-digital conversion; flash A/D converter; radiation hardness; total dose radiation; Analog-digital conversion; CMOS logic circuits; CMOS technology; Ionizing radiation; Logic arrays; Postal services; Resumes; Sampling methods; Signal analysis; Telephony;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213623
