Title :
Radiation tolerance of double layer field oxides
Author :
Neumeier, K. ; Seegebrecht, P. ; Bruemmer, H.P.
Author_Institution :
Fraunhofer Inst. for Solid State Technol., Munchen, Germany
Abstract :
The radiation hardness of an alternative field oxide technology has been investigated. The discussed field oxide is built up of a double layer consisting of a thick, chemically deposited and doped SiO2 layer on top of a thin, thermally grown SiO2 film. The influence of the dopants of the CVD oxide as well as the annealing temperature on the radiation hardness of the field oxide are examined in order to find optimized process parameters. Compared to thermal oxides, a 2.5 order of magnitude improvement in radiation tolerance is observed with regard to the threshold voltage shift
Keywords :
MOS integrated circuits; annealing; chemical vapour deposition; integrated circuit technology; radiation hardening (electronics); CVD oxide; SiO2; annealing temperature; double layer; double layer field oxides; optimized process parameters; radiation hardness; radiation tolerance; threshold voltage shift; Annealing; Chemical technology; Chemical vapor deposition; Insulation; MOS capacitors; MOSFET circuits; Silicon devices; Solid state circuits; Temperature; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213628
