Total-dose characterization of CMOS/SOI-ZMR technology

Author

Coumar, Oudea ; Gaillard, R.

Author_Institution

Nucletudes-Groupe Aerospatiale, Les Ulis, France

fYear

1991

fDate

9-12 Sep 1991

Firstpage

199

Lastpage

204

Abstract

Presents the total dose radiation characterization of an unhardened SOI/ZMR technology of CNET/CNS (Centre National d´Etudes des Telecommunications-France). Various bias conditions are applied on front gate oxide and buried oxide during gamma irradiation in order to define the worst and best case configurations for different devices: transistors, capacitors and ring oscillator. The author compares the radiation responses of transistors with different structures to allow clear separation of device conduction on top channel, back channel and edge channel along the sidewalls of the island. MOS structure with body contact shows improved subthreshold characteristics before and after dose radiation. A good correlation is observed between n-substrate capacitor and p-channel transistors irradiated at -5 V back-gate bias. Radiation induced `kink´ effects are observed on PMOS transistors for a positive back gate bias (+5 V) during irradiation. This original phenomena has been confirmed by 2D numerical device simulator TITAN of CNET/CNS. Satisfactory total dose response of a ring oscillator is obtained

Keywords

CMOS integrated circuits; gamma-ray effects; insulated gate field effect transistors; semiconductor process modelling; semiconductor-insulator boundaries; -5 V; 2D numerical device simulator; 5 V; CMOS/SOI-ZMR technology; CNET/CNS; TITAN; back channel; back-gate bias; bias conditions; body contact; buried oxide; device conduction; edge channel; front gate oxide; gamma irradiation; kink effects; n-substrate capacitor; p-channel transistors; radiation responses; ring oscillator; subthreshold characteristics; top channel; total dose radiation; total dose response; CMOS technology; Capacitance; Circuit testing; Lamps; MOS capacitors; MOSFETs; Numerical simulation; Radiation hardening; Ring oscillators; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on

Conference_Location

La Grande-Motte

Print_ISBN

0-7803-0208-7

Type

conf

DOI

10.1109/RADECS.1991.213631

Filename

213631