A study on perturbation mode of microwave heating substrate temperature-field

The paper presents a new technique, i.e. by microwave design of microwave heating substrate (MHS), presents a microwave axial symmetry temperature field model and finds the general solution by using a perturbation method. On this basis, we design a so-called synthesis dielectric heating substrate and obtain the optimized and larger uniform temperature-field areas than the diameter of the substrate holder in a microwave plasma chemical vapor deposition (MPCVD) system.