Title :
Numerical simulation of SOS structures
Author :
Saussine, J.D. ; Verbeck, C. ; Michez, A. ; Bordure, G. ; Bruguier, G.
Author_Institution :
Dassault Electronique, Saint-Cloud, France
Abstract :
Presents the simulation results concerning SOS (Silicon On Sapphire) technology structures exposed to transient irradiation. The structures consist of one or more parallel silicon bands, biased and placed on a sapphire substrate. First of all, the sapphire is assimilated to a pure resistance: the sapphire photocurrent value is deduced from the substrate resistance value (resolution of Laplace´s equation). Secondly, sapphire behavior being exposed to irradiation is simulated. The simulation indicates the large influence of the space charge zone and reveals new phenomena
Keywords :
field effect integrated circuits; numerical analysis; radiation effects; space charge; Laplace´s equation; SOS structures; parallel silicon bands; photocurrent value; pure resistance; space charge zone; transient irradiation; CMOS technology; Charge carrier processes; Computational modeling; Electron mobility; Laplace equations; Numerical simulation; Photoconductivity; Poisson equations; Silicon; Substrates;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213632
