Title :
Influence of parasitic transistors on the total dose hardness of MOS and MOS/SOI structures
Author :
Augier, P. ; Boudenot, J.C. ; Roy, F. ; Bruguier, G.
Author_Institution :
Thomson-CSF DSE, Bagneux, France
Abstract :
In all CMOS technologies, the total dose sensitivity is determined by the properties of the gate oxide and the device isolation oxide. The hardness of CMOS circuits is limited by the presence of parasitic elements in parallel with the active structures. Improvements in gate-oxide behavior increase the importance of parasitic MOS structures in determining the total dose hardness of CMOS circuits
Keywords :
CMOS integrated circuits; radiation effects; semiconductor-insulator boundaries; CMOS technologies; MOS/SOI structures; active structures; device isolation oxide; gate oxide; gate-oxide behavior; parasitic MOS structures; parasitic elements; parasitic transistors; total dose hardness; total dose sensitivity; CMOS technology; Circuits; Failure analysis; Isolation technology; MOS devices; MOSFETs; Manufacturing; Silicon on insulator technology; Space technology; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213636
