Ionizing effects in vitreous silica and SOI SIMOX buried oxide by study of trapped charges and paramagnetic defect creation

Presents experimental data concerning the relationship between trapped charge and electron spin resonance E´ signal after irradiation. For this purpose, two kinds of oxides are compared: vitreous silica and buried silicon dioxide synthesized by high fluence, high energy oxygen implantation in silicon (SIMOX). In this case, the trapped charge is measured by MOS effect, and is compared to the E´ signal in various conditions of bias field and at high and very high dose levels. It is found first that vitreous silica and buried SIMOX oxide behave differently with dose, the latter containing a larger amount of E´ defects generated under irradiation. Secondly, in SIMOX, the trapped charge build-up saturates whereas the E´ centers do not, so that charges and E´ defects do not match with each other. Other phenomena must be taken into account and various factors must be combined to obtain a consistent picture. This is done following a short review of available information