DocumentCode
3149998
Title
Radiation-induced changes in floating-body phenomena in SOI MOSFETs
Author
Ouisse, T. ; Ghibaudo, G. ; Brini, J. ; Cristoloveanu, S. ; Borel, G.
Author_Institution
Thomson-TMS, Saint-Egreve, France
fYear
1991
fDate
9-12 Sep 1991
Firstpage
164
Lastpage
167
Abstract
An analytical model and experimental results are proposed to account for the floating body effects in silicon-on-insulator (SOI) MOSFETs. It is shown both theoretically and experimentally that an SOI MOSFET may exhibit simultaneously a negative conductance and a negative transconductance. The evolution of these effects under an X-ray exposure is studied and described in detail
Keywords
X-ray effects; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; SOI MOSFETs; X-ray exposure; analytical model; floating-body phenomena; negative conductance; negative transconductance; Analytical models; Diodes; Hysteresis; Insulation; Linear predictive coding; MOSFETs; Mathematical model; Space technology; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location
La Grande-Motte
Print_ISBN
0-7803-0208-7
Type
conf
DOI
10.1109/RADECS.1991.213638
Filename
213638
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