• DocumentCode
    3150858
  • Title

    Ionization growth in nitrogen gas in a coaxial geometry

  • Author

    Kashmiri, S. ; Lam, K. ; Mahajan, S.

  • Author_Institution
    Dept. of Electr. Eng., Tennessee Technol. Univ., Cookeville, TN, USA
  • fYear
    1990
  • fDate
    1-4 Apr 1990
  • Firstpage
    4
  • Abstract
    Electron avalanches are simulated in a coaxial geometry with nitrogen gas pressures up to 405.2 kPa. The purpose behind this simulation is to study the relative effect of nonuniformity and pressure on the growth of electron avalanches. Irrespective of the radius of the inner electrode, the multiplication of electrons is allowed over 1 cm only. The simulation is performed in various coaxial geometries. Comparisons of electron avalanches under different conditions of pressure and radius are made in the context of the time required for breakdown of the gas
  • Keywords
    electron avalanches; nitrogen; 101.3 kPa; 202.6 kPa; 303.9 kPa; 405.2 kPa; N2; coaxial geometry; electron avalanches; electron multiplication; gas breakdown; ionisation growth; Atmospheric modeling; Breakdown voltage; Coaxial components; Dielectrics; Electrons; Equations; Geometry; Ionization; Nitrogen; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Southeastcon '90. Proceedings., IEEE
  • Conference_Location
    New Orleans, LA
  • Type

    conf

  • DOI
    10.1109/SECON.1990.117757
  • Filename
    117757
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3150858