DocumentCode
3150938
Title
A high power circuit model for the gate turn off thyristor
Author
Tsay, C.L. ; Fischl, R. ; Schwartzenberg, J. ; Kan, H. ; Barrow, J.
Author_Institution
Dept. of Electr. & Comput. Eng., Drexel Univ., PHiladelphia, PA, USA
fYear
1990
fDate
0-0 1990
Firstpage
390
Lastpage
397
Abstract
The authors present GTO (gate turn off thyristor) model which simulates both the static negative differential resistance characteristics and the dynamic switching characteristics. The model consists of parallel connection of two-transistor, three-resistor (2T-3R) circuits which make it compatible with the SPICE program. An experimental validation test shows that the accuracy of the model can be improved by increasing the number of 2T-3R cells.<>
Keywords
switching; thyristor applications; GTO; dynamic switching characteristics; gate turn off thyristor; high power circuit model; static negative differential resistance; two-transistor three resistor circuits; Circuit simulation; Circuit synthesis; Computational modeling; Computer simulation; Electric resistance; P-n junctions; Power electronics; Resistors; SPICE; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1990. PESC '90 Record., 21st Annual IEEE
Conference_Location
San Antonio, TX, USA
Type
conf
DOI
10.1109/PESC.1990.131214
Filename
131214
Link To Document