Title :
A novel small capacitance RF-MOSFET with small-resistance long-finger gate electrode
Author :
Nagase, Hirokazu ; Tanabe, Akira ; Hayashi, Yoshihiro
Author_Institution :
LSI Fundamental Research Laboratory, NEC Electronics Corporation, Japan
Abstract :
We have developed a small capacitance RFMOSFET with small-resistance long-finger gate electrode, which is featured by Direct Finger Contact (DFC) on the gate electrode in active region to reduce its resistance. The unique structure and layout, which is different from a conventional multipliedshort- finger MOSFET, suppress the parasitic capacitance around the gate electrode to obtain high fT. This layout-optimized DFC MOSFET is very useful for RF/Mixed signal SoCs in deep-submicron generations.
Keywords :
Contact resistance; Digital-to-frequency converters; Electrodes; Fingers; Laboratories; Large scale integration; MOSFET circuits; National electric code; Parasitic capacitance; Radio frequency;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517989
