• DocumentCode
    3151106
  • Title

    A novel small capacitance RF-MOSFET with small-resistance long-finger gate electrode

  • Author

    Nagase, Hirokazu ; Tanabe, Akira ; Hayashi, Yoshihiro

  • Author_Institution
    LSI Fundamental Research Laboratory, NEC Electronics Corporation, Japan
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    We have developed a small capacitance RFMOSFET with small-resistance long-finger gate electrode, which is featured by Direct Finger Contact (DFC) on the gate electrode in active region to reduce its resistance. The unique structure and layout, which is different from a conventional multipliedshort- finger MOSFET, suppress the parasitic capacitance around the gate electrode to obtain high fT. This layout-optimized DFC MOSFET is very useful for RF/Mixed signal SoCs in deep-submicron generations.
  • Keywords
    Contact resistance; Digital-to-frequency converters; Electrodes; Fingers; Laboratories; Large scale integration; MOSFET circuits; National electric code; Parasitic capacitance; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5517989
  • Filename
    5517989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3151106