Title :
Over 10W C-Ku band GaN MMIC non-uniform distributed power amplifier with broadband couplers
Author :
Masuda, Satoshi ; Akasegawa, Akihiko ; Ohki, Toshihiro ; Makiyama, Kozo ; Okamoto, Naoya ; Imanishi, Kenji ; Kikkawa, Toshihide ; Shigematsu, Hisao
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
A 6-18 GHz monolithic microwave integrated circuit (MMIC) power amplifier (PA) was successfully developed using a quarter wavelength short stub and a monolithic broadband coupler for a non-uniform distributed power amplifier (NDPA) topology. This topology improved the output power at 18 GHz and attained a flat output power profile over 6-18 GHz. It also achieved filtering characteristics for both lower and higher cut-off frequencies. A fabricated MMIC PA with 0.25μm GaN HEMTs delivered an output power of more than 10 W with average power added efficiency (PAE) of 18% over 6 to 18 GHz. To the best of our knowledge, this is the best combination of output power and bandwidth for any solid-state MMIC amplifier operating up to the full Ku-band.
Keywords :
HEMT circuits; MMIC power amplifiers; waveguide couplers; HEMT; MMIC nonuniform distributed power amplifier; monolithic broadband coupler; monolithic microwave integrated circuit; power added efficiency; Broadband amplifiers; Circuit topology; Couplers; Distributed amplifiers; Gallium nitride; MMICs; Microwave amplifiers; Microwave integrated circuits; Power amplifiers; Power generation; C-Ku band; GaN HEMT; MMIC; non-uniform distributed power amplifier;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517992