DocumentCode :
3152028
Title :
The low temperature switching performance of thyristors and MOSFETs
Author :
Hudgins, J.L. ; Menhart, S. ; Portnoy, W.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
fYear :
1990
fDate :
0-0 1990
Firstpage :
429
Lastpage :
434
Abstract :
The measured switching performance of MOS-controlled thyristors (MCTs), an SCR (silicon-controlled rectifier), and a power MOSFET are discussed for operating temperatures from 25 to -180 degrees C. Current pulses of up to 340 A were conducted for a duration of 10 mu s. A comparison of the energy losses, switching times, and device behavior as a function of temperature is also presented. It is shown that under controlled situations, the MCT compares favorably when used at low ambient and junction temperatures. These devices turn on quickly enough to keep the switching losses small when conducting large currents, though at low current levels and high frequencies the MOSFET is still the superior device because of its very fast turn-on. Based on conduction losses at high current levels, the MCTs outperformed the other test devices.<>
Keywords :
insulated gate field effect transistors; power transistors; switching; thyristors; -180 to 25 degC; MOS-controlled thyristors; SCR; conduction losses; energy losses; junction temperatures; low temperature switching performance; power MOSFET; switching times; thyristors; turn-on; Anodes; Cryogenics; FETs; Frequency conversion; MOSFETs; Power engineering and energy; Power measurement; Power semiconductor switches; Temperature; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1990. PESC '90 Record., 21st Annual IEEE
Conference_Location :
San Antonio, TX, USA
Type :
conf
DOI :
10.1109/PESC.1990.131219
Filename :
131219
Link To Document :
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