DocumentCode
3152079
Title
Vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy
Author
Leinonen, P. ; Leinonen, T. ; Viheriala, Jukka ; Pessa, M. ; Kim, Y.K. ; Young, E.W. ; Choquette, K.D.
Author_Institution
Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland
fYear
2003
fDate
22-27 June 2003
Firstpage
131
Abstract
We have observed, single mode lasing at 766 nm in vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy. This could play an important role in the development of cost-effective and accurate oxygen sensor.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gas sensors; indium compounds; laser modes; molecular beam epitaxial growth; quantum well lasers; surface emitting lasers; 766 nm; AlGaAs quantum wells; AlGaInAs quantum wells; AlGaInAs-AlGaAs; molecular beam epitaxy; oxygen sensor; single mode lasing; vertical cavity surface emitting lasers; Absorption; Apertures; Distributed Bragg reflectors; Gallium arsenide; Molecular beam epitaxial growth; Optical sensors; Optical surface waves; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312192
Filename
1312192
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