• DocumentCode
    3152239
  • Title

    The low temperature behavior of thyristors

  • Author

    Menhart, Steve ; Hudgins, Jerry L. ; Portnoy, William M.

  • Author_Institution
    Dept. of Eng. Tech., Arkansas Univ., Little Rock, AR, USA
  • fYear
    1990
  • fDate
    0-0 1990
  • Firstpage
    435
  • Lastpage
    442
  • Abstract
    The forward breakover voltage (V/sub BF/) and forward conduction voltage drop of a thyristor have been measured as a function of decreasing temperature between 25 degrees C and -180 degrees C. The theoretical temperature dependence of the above parameters is derived and compared to the experimental results. The predicted fall of V/sub BF/ as temperature is decreased is primarily determined by the associated decrease in the avalanche breakdown voltage. The calculated and measured forms of V/sub BF/ generally show close correspondence, although the measured data show some deviation from the initial rate of linear fall at around -140 degrees C. At room temperature, all of the donor and acceptor atoms are ionized so that the donor/acceptor concentrations and carrier concentrations can be used interchangeably. As temperature is decreased, the above becomes an approximation, and the ionized donor/acceptor concentrations should strictly be used. At lower temperatures, the effective donor concentration decreases.<>
  • Keywords
    semiconductor device models; thyristors; -140 degC; -180 to 25 degC; acceptor; avalanche breakdown voltage; donor; forward breakover voltage; forward conduction voltage drop; low temperature behavior; modelling; thyristors; Anodes; Avalanche breakdown; Breakdown voltage; Cathodes; Impurities; Inverters; Niobium; Performance evaluation; Temperature dependence; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1990. PESC '90 Record., 21st Annual IEEE
  • Conference_Location
    San Antonio, TX, USA
  • Type

    conf

  • DOI
    10.1109/PESC.1990.131220
  • Filename
    131220