Title :
GaSb-based diode lasers for power applications in the 2 μm spectral range
Author :
Rattunde, M. ; Mermelstein, C. ; Schmitz, J. ; Kiefer, R. ; Pletschen, W. ; Walther, M. ; Wagner, Jens
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
This paper has realized quantum well diode lasers based on the (AlGaIn)(AsSb) material system. Broad-area (BA) lasers have been processed, high-reflection/anti-reflection (HR/AR) coated and the devices were mounted p-side down to improve heat sinking. In order to study the material gain of the GaInSb active layers and determine possible improvements of the power efficiency, a set of lasers with one, two and three quantum wells (QWs) have been fabricated and analyzed. Using an electro-optical model that includes the thermal effects in the active region, the optimum design for high power lasers is discussed considering the number of QWs.
Keywords :
III-V semiconductors; aluminium compounds; antireflection coatings; electro-optical effects; gallium compounds; heat sinks; indium compounds; laser beams; laser materials processing; quantum well lasers; semiconductor quantum wells; thermo-optical effects; (AlGaIn)(AsSb) material system; 2.0 micron; AlGaIn-AsSb; GaSb-based diode lasers; QW; broad-area lasers; electro-optical model; heat sinking; high power laser design; high-reflection-anti-reflection coating; power applications; power efficiency; quantum well diode lasers; quantum well fabrication; thermal effects; Diode lasers; Heat sinks; Laser stability; Optical materials; Power generation; Power lasers; Quantum well lasers; Temperature distribution; Testing; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312203
