DocumentCode :
3152363
Title :
Solid-state amplifiers for terahertz electronics
Author :
Deal, W.R.
Author_Institution :
Northrop Grumman, Redondo Beach, United States
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
With the fMAX of current generation InP transistors pushing above 1-THz and new transistor scaling in progress, the operational frequency of solid-state amplifiers is being pushed towards THz frequencies. In this paper we present our latest work towards demonstrating THz frequency amplifiers,including measured gain and noise performance of a 0.48 THz low noise amplifier using scaled InP transistors. Initial performance of next generation transistors is also presented, along with infrastructure necessary to package and operate solidstate amplifiers at THz frequencies.
Keywords :
Frequency measurement; Gain measurement; Indium phosphide; Low-noise amplifiers; Noise measurement; Operational amplifiers; Packaging; Performance gain; Solid state circuits; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5518052
Filename :
5518052
Link To Document :
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