Title :
High-quality red laser material grown by solid-source molecular beam epitaxy
Abstract :
We present high-quality AlGaInP/GaInP heterostructures for visible light laser diodes. Material quality is validated by processing lasers at 650 nm. Over 2 W output and a low threshold current density was obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser materials processing; molecular beam epitaxial growth; semiconductor lasers; 2 W; 650 nm; AlGaInP-GaInP; AlGaInP-GaInP heterostructures; material quality; processing lasers; red laser material; solid-source molecular beam epitaxy; threshold current density; visible light laser diodes; Diode lasers; Laser beam cutting; Molecular beam epitaxial growth; Optical materials; Optical pumping; Optical recording; Pump lasers; Quantum well lasers; Solid lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312207
