DocumentCode
3152395
Title
High-quality red laser material grown by solid-source molecular beam epitaxy
Author
Pessa, M.
fYear
2003
fDate
22-27 June 2003
Firstpage
146
Abstract
We present high-quality AlGaInP/GaInP heterostructures for visible light laser diodes. Material quality is validated by processing lasers at 650 nm. Over 2 W output and a low threshold current density was obtained.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser materials processing; molecular beam epitaxial growth; semiconductor lasers; 2 W; 650 nm; AlGaInP-GaInP; AlGaInP-GaInP heterostructures; material quality; processing lasers; red laser material; solid-source molecular beam epitaxy; threshold current density; visible light laser diodes; Diode lasers; Laser beam cutting; Molecular beam epitaxial growth; Optical materials; Optical pumping; Optical recording; Pump lasers; Quantum well lasers; Solid lasers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312207
Filename
1312207
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