DocumentCode :
3152454
Title :
A highly efficient 1-GHz, 15-W power amplifier design based on a 50-V LDMOS transistor
Author :
Singerl, Peter ; Fager, Christian ; Wang, Zhen ; Schuberth, Christian ; Dielacher, Franz
Author_Institution :
Infineon Technologies Austria AG, Villach, Austria
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
We present a 15-W, 1-GHz harmonically tuned power amplifier (PA) with a power added efficiency (PAE) of 75%. The PA design is based on a packaged 50-V Si-LDMOS engineering sample. The PAE is maximized by an appropriate tuning of the fundamental and second harmonics, while the higher harmonics are shortened by the parasitic drain-source capacitance. The PA design is based on a simplified transistor model which is optimized for harmonically tuned PAs. The model parameters are extracted from IV- and S-parameter measurements of the packaged LDMOS device. A good agrement between the simulation and measurement results shows the accuracy of the modeling and PA design procedure.
Keywords :
Design engineering; Design optimization; High power amplifiers; Packaging; Parasitic capacitance; Power engineering and energy; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5518057
Filename :
5518057
Link To Document :
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