Title :
Optimisation of optical cavity design of GaN resonant cavity light emitting diodes
Author :
Shaw, A.J. ; Donegan, J.F. ; Bradley, A. Louise ; Lunney, J.G.
Author_Institution :
Phys. Dept., Trinity Coll., Dublin, Ireland
Abstract :
Resonant cavity light emitting diodes (RCLEDs) have shown considerable potential as sources in plastic optical fiber (POF) applications. The optical properties of the substrate emitting metal-DBR GaN RCLEDs differ considerably from those of the top emitting DBR-DBR RCLED structure of red RCLED devices. The optimum cavity design for maximum light extraction efficiency into numerical apertures (NAs) of 1.0 (total emission) and 0.5 (typical POF NA) have been determined as functions of the intrinsic emission linewidth of the InGaN/GaN QW emitter and the aluminum fraction in the DBR.
Keywords :
III-V semiconductors; distributed Bragg reflectors; gallium compounds; laser cavity resonators; light emitting diodes; optical design techniques; optical fibres; optimisation; 510 nm; 570 nm; 650 nm; InGaN-GaN; intrinsic emission; light extraction efficiency; numerical apertures; optical cavity design; optical properties; optimisation; plastic optical fiber; quantum well emitter; resonant cavity light emitting diodes; substrate emitting metal-distributed Bragg reflectors; Apertures; Design optimization; Gallium nitride; Light emitting diodes; Optical design; Optical devices; Optical fibers; Plastics; Resonance; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312222
