DocumentCode :
3152708
Title :
Highly integrated 79, 94, and 120-GHz SiGe radar frontends
Author :
Jahn, M. ; Stelzer, A. ; Hamidipour, A.
Author_Institution :
Johannes Kepler Univ. of Linz, Linz, Austria
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1324
Lastpage :
1327
Abstract :
This paper reflects on design aspects for multichannel frequency-continuous wave (FMCW) radar frontends from conception to application on board. In the 79-GHz domain, multi-channel applications are recapitulated, and in the 94-GHz domain, a broadband transceiver is presented along with a voltage-controlled oscillator (VCO) that covers a tuning range of 12 GHz. The functionality of the 94-GHz chipset was verified by means of a four-channel multiple-input multiple-output (MIMO) radar prototype. Finally, a highly integrated 120-GHz transceiver with on-chip signal generation is presented.
Keywords :
CW radar; MIMO radar; voltage-controlled oscillators; FMCW radar frontends; MIMO radar; SiGe; broadband transceiver; frequency 120 GHz; frequency 79 GHz; frequency 94 GHz; multichannel frequency-continuous wave; multiple-input multiple-output radar; on-chip signal generation; voltage-controlled oscillator; Frequency; Germanium silicon alloys; MIMO; Prototypes; Radar applications; Signal generators; Silicon germanium; Transceivers; Tuning; Voltage-controlled oscillators; FMCW; MMICs; Millimeter wave bipolar transistors; Millimeter wave circuits; Millimeter wave radar;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5518069
Filename :
5518069
Link To Document :
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