Title :
Operating regimes and optical bistability in InGaAs/InGaAsP and GaAs/AlGaAs ring lasers
Author :
Sorel, M. ; Laybourn, P.J.R. ; Giuliani, G. ; Donati, S. ; Scire, Alessia
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
It has recently been found that the coexistence of the two counterpropagating modes in the laser cavity may affect the optical stability and lead to a large variety of operating regimes. In this work we report on the ring cavity mode behaviour in ridge-waveguide semiconductor lasers fabricated on GaAs/AlGaAs and InGaAs/InGaAsP material systems. Investigation on the unidirectional operating regime has shown a drastic improvement in the device performance and frequency stability with respect to bidirectional operation. In addition, we found that a semiconductor ring laser (SRL) operating in the unidirectional regime behaves as an optical bistable device between the two counterpropagating modes.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser frequency stability; laser modes; optical bistability; ridge waveguides; ring lasers; semiconductor lasers; waveguide lasers; GaAs-AlGaAs; InGaAs-InGaAsP; bidirectional operating regime; frequency stability; laser cavity counterpropagating mode; optical bistability; optical bistable device; ridge-waveguide; ring cavity mode behaviour; semiconductor ring laser; unidirectional operating regime; Gallium arsenide; Indium gallium arsenide; Laser modes; Laser stability; Optical bistability; Optical devices; Optical materials; Ring lasers; Semiconductor lasers; Semiconductor materials;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312225