DocumentCode :
3152739
Title :
Effect of electron irradiation on annealing behavior of 1.3-μm GalnNAs/GaNAs/GaAs laser-like quantum wells
Author :
Pavelescu, E.-M. ; Pessa, M. ; Gheorghiu, A.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland
fYear :
2003
fDate :
22-27 June 2003
Firstpage :
165
Abstract :
Thermal annealing efficiently enhances the poor optical activity of GaInNAs-based quantum-well (QW) structures. 7-MeV electron irradiation at the 2×1017 e/cm2 fluence decreased almost two times the PL intensity of GaInNAs/GaNAs/GaAs QWs. At the same time, the PL linewidth enhanced with 1.6 meV, whereas the PL red shifted with 6 nm.
Keywords :
III-V semiconductors; electron beam annealing; gallium arsenide; gallium compounds; indium compounds; photoluminescence; rapid thermal annealing; red shift; semiconductor lasers; semiconductor quantum wells; wide band gap semiconductors; 1.3 micron; 1.6 meV; 7 MeV; GaInNAs-GaNAs-GaAs; GaInNAs-based quantum-well structures; PL red shift; electron irradiation; optical activity; thermal annealing; Atom optics; Computer aided analysis; Diffusion processes; Electrons; Gallium arsenide; Heat treatment; Quantum well lasers; Rapid thermal annealing; Stimulated emission; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
Type :
conf
DOI :
10.1109/CLEOE.2003.1312226
Filename :
1312226
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3152739
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