DocumentCode :
3152768
Title :
Application of Matching Structures to Identify the Source of Systematic Dimensional Offsets in GHOST Proximity Corrected Photomasks
Author :
Smith, S. ; Tsiamis, A. ; McCallum, M. ; Hourd, A.C. ; Stevenson, J.T.M. ; Walton, A.J.
Author_Institution :
Sch. of Eng., Univ. of Edinburgh, Edinburgh
fYear :
2009
fDate :
March 30 2009-April 2 2009
Firstpage :
50
Lastpage :
55
Abstract :
The effects of the GHOST proximity correction process on chrome-on-quartz photomasks can prove difficult to quantify and so they are not routinely characterised. This paper presents a methodology for addressing this issue using electrical test structures designed to measure dimensional mismatch. In the past these have been used successfully to characterise standard GHOSTed photomasks, which displayed systematic offsets that were not seen on an unGHOSTed mask using the same design. In order to investigate this further, a second mask was fabricated using a variation of the GHOST process which increased the resolution of the secondary exposure to be the same as the primary pattern. This enabled the source of the previously observed systematic offset to be determined as test structures on the new mask did not show the same overall dimensional bias. However, the range of mismatch in some of the structures was increased as a result of the new process.
Keywords :
masks; proximity effect (lithography); chrome-on-quartz photomasks; electrical test structures; matching structures; proximity corrected photomasks; systematic dimensional offsets; Bridge circuits; Current measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Metrology; Microelectronics; Resistors; Systems engineering and theory; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on
Conference_Location :
Oxnard, CA
Print_ISBN :
978-1-4244-4259-1
Type :
conf
DOI :
10.1109/ICMTS.2009.4814609
Filename :
4814609
Link To Document :
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