A fast quantum-well semiconductor saturable-absorber mirror with low losses for sub-ps passively mode-locked laser

Author

Garnache, A. ; Sermage, B. ; Teissier, R. ; Saint-Girons, G. ; Sagnes, I.

Author_Institution

Centre d´´Electronique et de Microoptoelectronique de Montpellier, Univ. Montpellier, France

fYear

2003

fDate

22-27 June 2003

Firstpage

167

Abstract

We have developed an all-epitaxial fast QW semiconductor saturable-absorber mirror (SESAM) grown in one step under standard conditions, having low nonsaturable losses. We obtained ∼21 ps excited carrier lifetime. This device is well suited for passively mode-locked sources. With this device, we recently obtained sub-500 fs soliton-like pulse in a VCSELs. With 100 mW average power at >1.2 GHz.

Keywords

carrier lifetime; epitaxial growth; high-speed optical techniques; laser mode locking; mirrors; optical losses; optical saturable absorption; optical solitons; quantum well lasers; surface emitting lasers; 100 mW; 500 fs; VCSEL; epitaxial fast QW SESAM; low nonsaturable loss; quantum-well semiconductor; saturable-absorber mirror; soliton-like pulse; sub-ps passively mode-locked laser; Charge carrier lifetime; Gallium arsenide; Laser mode locking; Mirrors; Photonic band gap; Quantum well lasers; Quantum wells; Semiconductor lasers; Thermionic emission; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Print_ISBN

0-7803-7734-6

Type

conf

DOI

10.1109/CLEOE.2003.1312228

Filename

1312228