DocumentCode
3152784
Title
An Analysis of Temperature Impact on MOSFET Mismatch
Author
Mennillo, S. ; Spessot, A. ; Vendrame, L. ; Bortesi, L.
Author_Institution
R&D - Technol. Dev., Agrate Brianza
fYear
2009
fDate
March 30 2009-April 2 2009
Firstpage
56
Lastpage
61
Abstract
Summarizing the results collected on several technologies, we have studied the impact of temperature on MOSFET mismatch, highlighting the improvement of current gain matching properties with temperature, suggesting a possible physical explanation to this phenomenon and proposing a BSIM3 model implementation for Monte Carlo mismatch simulations.
Keywords
MOSFET; Monte Carlo methods; semiconductor device models; thermal analysis; BSIM3 model implementation; MOSFET mismatch; Monte Carlo mismatch simulation; current gain matching property; temperature impact analysis; Analytical models; Current measurement; Gain measurement; Geometry; MOSFET circuits; Measurement techniques; Monte Carlo methods; Particle measurements; Temperature distribution; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on
Conference_Location
Oxnard, CA
Print_ISBN
978-1-4244-4259-1
Type
conf
DOI
10.1109/ICMTS.2009.4814610
Filename
4814610
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