Title :
Measurement of MOSFET C-V Curve Variation Using CBCM Method
Author :
Tsuji, Katsuhiro ; Terada, Kazuo ; Nakamoto, Tomoaki ; Tsunomura, Takaaki ; Nishida, Akio
Author_Institution :
Grad. Sch. of Inf. Sci., Hiroshima City Univ., Hiroshima
fDate :
March 30 2009-April 2 2009
Abstract :
The test circuit, in which the cells including CBCMs (charge-based capacitance measurements) are arrayed in matrix shape, is developed to measure MOSFET capacitance variation. By adjusting the bias condition of the test circuit, it is able to obtain C-V curves for many MOSFETs. Additionally, a variation of threshold voltage is extracted from the estimated C-V curve variation. The obtained threshold voltage variations are close to those which are obtained from current-voltage characteristics.
Keywords :
MOSFET; capacitance measurement; semiconductor device measurement; MOSFET C-V curve variation; charge-based capacitance measurement; current-voltage characteristics; threshold voltage variation; Capacitance measurement; Capacitance-voltage characteristics; Circuit testing; Clocks; Current measurement; MOS devices; MOSFET circuits; Parasitic capacitance; Shape measurement; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on
Conference_Location :
Oxnard, CA
Print_ISBN :
978-1-4244-4259-1
DOI :
10.1109/ICMTS.2009.4814615
