Title :
Quantum dot (InAs/InGaAs DWELL) semiconductor optical amplifier
Author :
Bakonyi, Z. ; Onishchukov, G. ; Tünnermann, A. ; Su, H. ; Lester, L.F. ; Gray, A.L. ; Newell, T.C.
Author_Institution :
Inst. of Appl. Phys., Friedrich Schiller Univ. of Jena, Germany
Abstract :
In this paper, InAs/InGaAs quantum dot SOA emitting at greater than 1300 nm with gain as high as 18 dB at low with 100 mA pump current was designed and manufactured. The gain recovery dynamics of the QD-SOA sample was studied using a pump-probe set up. Extremely low linewidth enhancement factor and fast gain recovery make the device perspective for deployment in communication systems. The position of the gain peak and the bandwidth are practically temperature independent.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical design techniques; optical pumping; quantum dot lasers; recovery; semiconductor optical amplifiers; semiconductor quantum wells; 100 mA; InAs-InGaAs; InAs-InGaAs quantum dot-semiconductor optical amplifier; communication system; gain recovery dynamics; linewidth enhancement factor; pump current; pump-probe set up; Broadband amplifiers; Indium gallium arsenide; Noise figure; Optical amplifiers; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; Stationary state; Temperature measurement; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312235
