Quantum dot (InAs/InGaAs DWELL) semiconductor optical amplifier

Author

Bakonyi, Z. ; Onishchukov, G. ; Tünnermann, A. ; Su, H. ; Lester, L.F. ; Gray, A.L. ; Newell, T.C.

Author_Institution

Inst. of Appl. Phys., Friedrich Schiller Univ. of Jena, Germany

fYear

2003

fDate

22-27 June 2003

Firstpage

174

Abstract

In this paper, InAs/InGaAs quantum dot SOA emitting at greater than 1300 nm with gain as high as 18 dB at low with 100 mA pump current was designed and manufactured. The gain recovery dynamics of the QD-SOA sample was studied using a pump-probe set up. Extremely low linewidth enhancement factor and fast gain recovery make the device perspective for deployment in communication systems. The position of the gain peak and the bandwidth are practically temperature independent.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical design techniques; optical pumping; quantum dot lasers; recovery; semiconductor optical amplifiers; semiconductor quantum wells; 100 mA; InAs-InGaAs; InAs-InGaAs quantum dot-semiconductor optical amplifier; communication system; gain recovery dynamics; linewidth enhancement factor; pump current; pump-probe set up; Broadband amplifiers; Indium gallium arsenide; Noise figure; Optical amplifiers; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; Stationary state; Temperature measurement; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Print_ISBN

0-7803-7734-6

Type

conf

DOI

10.1109/CLEOE.2003.1312235

Filename

1312235