Auger recombination in 1.3-μm InAs/GaInAs quantum dot lasers studied using high pressure

Author

Marko, I.P. ; Andreev, A.D. ; Adams, A.R. ; Krebs, R. ; Reithmaier, J.P. ; Forchel, A.

Author_Institution

Dept. of Phys., Surrey Univ., Guildford, UK

fYear

2003

fDate

22-27 June 2003

Firstpage

175

Abstract

The Auger recombination in 1.3μm InAs/GalnAs quantum dot lasers were investigated. To analyse the experimental results, theoretical model was used which includes strain, piezoelectric field and electronic structure calculated in the QDs of truncated pyramid shape. It was found that the radiative current increases with pressure, but the Auger recombination current decreases with pressure and is the dominant recombination path at room temperature in 1.3μm QD lasers.

Keywords

Auger effect; III-V semiconductors; electron-hole recombination; electronic structure; gallium compounds; indium compounds; piezo-optical effects; quantum dot lasers; 1.3 micron; 293 to 298 KK; Auger recombination; InAs-GaInAs; InAs-GaInAs quantum dot laser; electronic structure calculation; high pressure; piezoelectric field; radiative current; strain; Laser modes; Laser theory; Physics; Quantum dot lasers; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature measurement; Threshold current; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Print_ISBN

0-7803-7734-6

Type

conf

DOI

10.1109/CLEOE.2003.1312236

Filename

1312236