DocumentCode
3152941
Title
GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters
Author
Byrne, D. ; Natali, F. ; Semond, F. ; Grandjean, N. ; Damilano, B. ; Massies, J.
Author_Institution
Centre de Recherche sur I´´Hetero-Epitaxie et ses Appl., Centre Nat. de la Recherche Sci., Sophia Antipolis, France
fYear
2003
fDate
22-27 June 2003
Firstpage
178
Abstract
The optical properties of GaN/AlGaN multiple quantum wells grown by molecular beam epitaxy on Si (111) substrates are presented for the first time including measurements of the built in electric field strength, internal quantum efficiency and oscillator strength.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; light emitting devices; molecular beam epitaxial growth; optical properties; semiconductor quantum wells; silicon; wide band gap semiconductors; GaN-AlGaN; GaN-AlGaN multiple quantum well; UV light emitter; electric field strength; internal quantum efficiency; molecular beam epitaxy; optical property; oscillator strength; silicon substrate; Aluminum gallium nitride; Electric variables measurement; Gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Oscillators; Silicon; Stimulated emission; Substrates; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312239
Filename
1312239
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