Title :
Advanced Method for Measuring Ultra-Low Contact Resistivity Between Silicide and Silicon Based on Cross Bridge Kelvin Resistor
Author :
Isogai, T. ; Tanaka, H. ; Teramoto, A. ; Goto, T. ; Sugawa, S. ; Ohmi, T.
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai
fDate :
March 30 2009-April 2 2009
Abstract :
In order to evaluate low contact resistivity precisely, we have developed a new test structure based on cross bridge Kelvin resistor. In this structure, the misalignment margin can be as small as possible. Furthermore, we had successively derived the theoretical expressions to ensure the validity of the newly developed method. This method will enable us to evaluate the silicide to silicon contact resistivity in the sub-10-8 Omegacm2 region.
Keywords :
electric resistance measurement; electrical contacts; electrical resistivity; elemental semiconductors; resistors; semiconductor-insulator boundaries; silicon; Si; cross bridge Kelvin resistor; silicide-silicon contact; test structure; ultralow contact resistivity measurement; Bridges; Circuit simulation; Conductivity; Contact resistance; Electrical resistance measurement; Kelvin; Resistors; Silicides; Silicon; Testing;
Conference_Titel :
Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on
Conference_Location :
Oxnard, CA
Print_ISBN :
978-1-4244-4259-1
DOI :
10.1109/ICMTS.2009.4814621
