Title :
Determination of the band diagram of the semiconductor laser structure by optical modulation spectroscopy methods
Author :
Chernikov, M.A. ; Sotnikov, A.E. ; Ryabushkin, O.A. ; Trubenko, P. ; Berishev, I. ; Ovtchinnikov, A.
Author_Institution :
Moscow Inst. of Phys. & Technol., Russia
Abstract :
This paper presents the use of photoreflectance, configuration of electroreflectance and below-bandgap-excitation photoreflectance for determination of the band diagram of the semiconductor laser AlGaAs/GaAs heterostructure with strained InGaAs quantum well grown on n-GaAs substrate. The structure was illuminated by low-intensity probe light with quantum energy and was exposed to external influence with modulation frequency f=330Hz.
Keywords :
III-V semiconductors; aluminium compounds; electroreflectance; energy gap; gallium arsenide; indium compounds; modulation spectroscopy; optical modulation; photoreflectance; probes; semiconductor lasers; semiconductor quantum wells; 330 Hz; AlGaAs-GaAs; AlGaAs-GaAs heterostructure; GaAs; InGaAs; InGaAs quantum well; band diagram; below-bandgap-excitation photoreflectance; electroreflectance; illumination; modulation frequency; n-GaAs substrate; optical modulation spectroscopy method; probe light; quantum energy; semiconductor laser; Business process re-engineering; Electrons; Erbium; Optical modulation; Permittivity measurement; Physics; Probes; Quantum well lasers; Semiconductor lasers; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312240
