Title :
High spatial resolution of argon plasma-based quantum well intermixing using thermal stress-induced mask in InGaAs/InGaAsP laser structure
Author :
Djie, H.S. ; Arokiaraj, J. ; Mei, T. ; Ng, S.L.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
This paper deals about the high spatial resolution technique of argon plasma based quantum well intermixing using Si3N4 as the thermal stress-induced annealing mask in InGsAs/InGaAsP laser structure.
Keywords :
III-V semiconductors; argon; gallium arsenide; indium compounds; masks; semiconductor lasers; semiconductor quantum wells; silicon compounds; thermal stresses; Ar; InGaAs-InGaAsP; InGsAs-InGaAsP laser structure; Si3N4; annealing mask; argon plasma; quantum well intermixing; spatial resolution technique; thermal stress; Annealing; Argon; Indium gallium arsenide; Photonic band gap; Plasma applications; Plasma devices; Plasma sources; Quantum well lasers; Spatial resolution; Thermal stresses;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312241
