DocumentCode :
3153063
Title :
Investigation of internal optical losses in multiple width quantum well lasers in comparison to conventional identical quantum well lasers
Author :
Jain, M. ; Ironside, C.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear :
2003
fDate :
22-27 June 2003
Firstpage :
185
Abstract :
Using a multisection device technique, we have carried out internal loss measurement comparison between two types of InGaAs/InAlGaAs quantum well structures. Active region of one structure consists of multiple width wells; and the other structure includes conventional identical width wells.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical loss measurement; quantum well lasers; InGaAs-InAlGaAs; InGaAs-InAlGaAs quantum well structure; active region; internal optical loss measurement; multiple width quantum well laser; multisection device technique; Indium gallium arsenide; Loss measurement; Optical devices; Optical losses; Optical materials; Optical scattering; Optical waveguides; Quantum well lasers; Semiconductor lasers; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
Type :
conf
DOI :
10.1109/CLEOE.2003.1312246
Filename :
1312246
Link To Document :
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