Characterization and modeling of mechanical stress in silicon-based devices

In this paper we show a self-consistent methodology to characterize the stress-induced mobility variation in silicon-based devices. The synergy among different experimental techniques (the application of an external mechanical stress and the measure of the process-induced stress), theoretical calculations (based on the finite elements method and the band structure calculation), and silicon validation (given by particular sets of test structures) is the strength of the characterization tool we propose.