Title :
Improved Parameter Extraction Procedure for PSP-Based MOS Varactor Model
Author :
Zhu, Z. ; Victory, J. ; Chaudhry, S. ; Dong, L. ; Yan, Z. ; Zheng, J. ; Wu, W. ; Li, X. ; Zhou, Q. ; Kolev, P. ; McAndrew, C.C. ; Gildenblat, G.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
fDate :
March 30 2009-April 2 2009
Abstract :
We present an improved procedure for extracting parasitic capacitance parameters and gate current parameters for MOSVAR, the industry standard MOS varactormodel. Our technique is verified against measured data from three technology nodes (180 nm, 130 nm and 65 nm), and is also used to validate the MOSVAR P-gate/P-well tunneling current sub-model.
Keywords :
CMOS integrated circuits; capacitance; radiofrequency integrated circuits; semiconductor device models; tunnelling; varactors; MOSVAR varactor model; RFCMOS technology; gate current parameters; gate tunneling current; parasitic capacitance parameters; Councils; Current measurement; Data mining; Geometry; Integrated circuit modeling; Parameter extraction; Parasitic capacitance; Solid modeling; Tunneling; Varactors;
Conference_Titel :
Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on
Conference_Location :
Oxnard, CA
Print_ISBN :
978-1-4244-4259-1
DOI :
10.1109/ICMTS.2009.4814629
