Title :
Piezoelectric InGaAs/GaAs/AlGaAs quantum well lasers grown on (111)A GaAs by metalorganic vapor phase epitaxy
Author :
Jongseok Kim ; Cho, Soohaeng ; Majerfeld, A. ; Sanz-Hervás, A. ; Patriarche, G. ; Kim, B.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA
Abstract :
This presents the properties of semiconductor double confinement strained PE InGaAs/GaAs/AlGaAs QW laser diodes grown on (111)A GaAs by MOVPE. The QW laser were grown on [111]A-oriented GaAs substrates and were extensively analyzed before laser fabrication by photoluminescence, high-resolution X-ray diffractometry, and transmission electron microscopy and was shown that these strained QWs have excellent interfacial properties and are fully strained without any evidence of strain relaxation. The optical and electrical characteristics of these lasers at low temperature and room temperature lasing in the 1.0-1.1μm wavelength region were also presented.
Keywords :
III-V semiconductors; MOCVD; X-ray diffractometers; aluminium compounds; gallium arsenide; indium compounds; optical fabrication; photoluminescence; piezoelectric semiconductors; quantum well lasers; transmission electron microscopy; vapour phase epitaxial growth; 1.0 to 1.1 micron; 293 to 298 K; GaAs; InGaAs-GaAs-AlGaAs; MOVPE; X-ray diffractometry; electrical characteristic; laser fabrication; metalorganic vapor phase epitaxy; optical characteristic; photoluminescence; semiconductor double confinement strained Piezoelectric InGaAs/GaAs/AlGaAs QW laser diode; transmission electron microscopy; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Quantum well lasers; Semiconductor lasers; Substrates; Temperature; X-ray lasers;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312248
