In-Situ Silicon Integrated Tuner for Automated On-Wafer MMW Noise Parameters Extraction using Multi-Impedance Method for Transistor Characterization

Author

Tagro, Y. ; Gloria, D. ; Boret, S. ; Morandini, Y. ; Dambrine, G.

Author_Institution

STMicroelectronics, Technol. R&D - TPS, Crolles

fYear

2009

fDate

March 30 2009-April 2 2009

Firstpage

184

Lastpage

188

Abstract

In this paper, for the first time, silicon integrated tuner is presented aiming silicon transistor (HBT, MOSFET) millimeter wave (MMW) noise parameters (NF_min, Rn, Gammaopt) extraction through multi-impedance method. This tuner is directly integrated in on-wafer tested transistor test structure. Design, electrical simulation and MMW measurement of the Tuner are described showing capability from 60 GHz up to 110 GHz for CMOS and BiCMOS sub 65 nm technologies characterization. |Gamma| of 0.88 have been achieved at the DUT input in the considered frequency range and tuner insertion losses are less than 20 dB.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; MOSFET; circuit tuning; electric impedance; elemental semiconductors; heterojunction bipolar transistors; integrated circuit design; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; millimetre wave bipolar transistors; millimetre wave field effect transistors; semiconductor device measurement; semiconductor device noise; silicon; BiCMOS sub65 nm technology; CMOS sub65 nm technology; DUT input; HBT; MOSFET; Si; automated on-wafer MMW noise parameter extraction; electrical simulation; frequency 60 GHz to 110 GHz; in-situ silicon integrated tuner; millimeter wave noise parameters; multiimpedance method; on-wafer tested transistor test structure; silicon transistor characterization; size 65 nm; tuner design; tuner insertion loss; Heterojunction bipolar transistors; MOSFET circuits; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Noise measurement; Parameter extraction; Silicon; Testing; Tuners; Active devices; HBT; Impedance tuner; MOSFET; cold FET; in-situ lab; multi-impedance; noise microwave measurement; transistors; transmission lines; varactor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on

Conference_Location

Oxnard, CA

Print_ISBN

978-1-4244-4259-1

Type

conf

DOI

10.1109/ICMTS.2009.4814637

Filename

4814637