Title :
Prospects of new technologies for power electronics in the 21st century
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
The emergence of power semiconductor devices such as insulated-gate bipolar transistors (IGBTs) or injection-enhanced gate transistors (IEGTs) and gate-commutated turn-off (GCT) thyristors or integrated gate-commutated thyristors (IGCTs) enables power conversion systems to expand into utility, leading to FACTS controllers. This paper describes prospects and directions of power electronics in the 21st century, with much focus on silicon-carbide devices suitable for the next-generation FACTS controllers.
Keywords :
MOS-controlled thyristors; commutation; flexible AC transmission systems; insulated gate bipolar transistors; power convertors; power semiconductor devices; silicon compounds; FACTS controllers; IEGT; IGBT; gate-commutated turn-off thyristors; injection-enhanced gate transistors; insulated-gate bipolar transistors; integrated gate-commutated thyristors; power conversion systems; power electronics; power semiconductor devices; silicon-carbide devices; Dielectrics and electrical insulation; Insulated gate bipolar transistors; Lead compounds; Low voltage; Power conversion; Power electronics; Power engineering and energy; Power semiconductor devices; Pulse width modulation inverters; Thyristors;
Conference_Titel :
Transmission and Distribution Conference and Exhibition 2002: Asia Pacific. IEEE/PES
Print_ISBN :
0-7803-7525-4
DOI :
10.1109/TDC.2002.1177685
