Prospects of new technologies for power electronics in the 21st century

Author

Akagi, Hirofumi

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan

Volume

2

fYear

2002

fDate

6-10 Oct. 2002

Firstpage

1399

Abstract

The emergence of power semiconductor devices such as insulated-gate bipolar transistors (IGBTs) or injection-enhanced gate transistors (IEGTs) and gate-commutated turn-off (GCT) thyristors or integrated gate-commutated thyristors (IGCTs) enables power conversion systems to expand into utility, leading to FACTS controllers. This paper describes prospects and directions of power electronics in the 21st century, with much focus on silicon-carbide devices suitable for the next-generation FACTS controllers.

Keywords

MOS-controlled thyristors; commutation; flexible AC transmission systems; insulated gate bipolar transistors; power convertors; power semiconductor devices; silicon compounds; FACTS controllers; IEGT; IGBT; gate-commutated turn-off thyristors; injection-enhanced gate transistors; insulated-gate bipolar transistors; integrated gate-commutated thyristors; power conversion systems; power electronics; power semiconductor devices; silicon-carbide devices; Dielectrics and electrical insulation; Insulated gate bipolar transistors; Lead compounds; Low voltage; Power conversion; Power electronics; Power engineering and energy; Power semiconductor devices; Pulse width modulation inverters; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Transmission and Distribution Conference and Exhibition 2002: Asia Pacific. IEEE/PES

Print_ISBN

0-7803-7525-4

Type

conf

DOI

10.1109/TDC.2002.1177685

Filename

1177685