Title :
Longitudinal current modulated light reflectance spectroscopy of high power semiconductor laser heterostructures
Author :
Ryabushkin, O.A. ; Romanyuk, A.Y. ; Chernikov, M.A. ; Sotnikov, A.E. ; Trubenko, P. ; Moshegov, N. ; Ovtchinnikov, A.
Author_Institution :
Inst.of Radio Eng. & Electron. (Fryazino branch), Russian Acad. of Sci., Russia
Abstract :
In this paper we introduce new efficient method of light reflectance modulation that is the modulation of energy of hot electrons or holes by longitudinal current that flows along the structure. The experiment was performed with molecular beam epitaxy (MBE) grown GaAs/AlGaAs heterostructure with strained InGaAs quantum well. Thus the longitudinal current modulated light reflectance (LCMR) method introduced in this paper is evidently more efficient than traditional photoreflectance and photoluminescence methods.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; modulation spectroscopy; molecular beam epitaxial growth; photoluminescence; photoreflectance; quantum well lasers; GaAs-AlGaAs; GaAs/AlGaAs heterostructure; InGaAs; InGaAs quantum well; hot electron energy modulation; light reflectance modulation; longitudinal current modulated light reflectance spectroscopy; molecular beam epitaxy; photoluminescence method; photoreflectance method; semiconductor laser heterostructure; Charge carrier processes; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical modulation; Photoluminescence; Power lasers; Reflectivity; Semiconductor lasers; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312256
