A 0.7 V, 23 GHz, low cost BiCMOS amplifier with 2.8 mW power consumption

Author

Pienkowski, Dariusz ; Subramanian, Viswanathan ; Boeck, Georg

Author_Institution

Microwave Eng. Group, Tech. Univ. Berlin

fYear

2006

fDate

10-12 Sept. 2006

Firstpage

71

Lastpage

74

Abstract

This paper shows a fully integrated, ESD protected, low-power, low-voltage amplifier designed with a low-cost 0.18 mum SiGe technology. The amplifier achieves 11 dB gain, 8 dB noise figure at 23 GHz and 1 dB compression point of -18 dBm consuming 2.8 mW from the 0.7 V supply voltage. At this frequency the amplifier shows also 9 and 13 dB input and output return losses, respectively. Gain and power consumption results yield to a gain per power-supply figure of merit of 3.9 dB/mW, which is one of the highest reported for that frequency range

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; electrostatic discharge; low-power electronics; protection; 0.18 micron; 0.7 V; 11 dB; 13 dB; 2.8 mW; 23 GHz; 9 dB; ESD protection; SiGe; SiGe technology; electrostatic discharge; figure of merit; low cost BiCMOS amplifier; low-power amplifier; power consumption; BiCMOS integrated circuits; Costs; Electrostatic discharge; Energy consumption; Frequency; Gain; Germanium silicon alloys; Noise figure; Protection; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Technology, 2006. The 9th European Conference on

Conference_Location

Manchester

Print_ISBN

2-9600551-5-2

Type

conf

DOI

10.1109/ECWT.2006.280437

Filename

4057440