Title :
A 29dBm linear output power amplifier with 21.3% efficiency for 700MHz-band 3GPP LTE OFDMA applications
Author :
Chow, Y.H. ; Nyeo, H.H. ; Chan, W.C. ; Lau, K.L. ; Khoo, S.H.
Author_Institution :
Avago Technol., Bayan Lepas, Malaysia
Abstract :
This paper describes the design and realization of a single-chip, 5V supply linear power amplifier for the 3GPP Long-Term Evolution (LTE) applications in the 700 MHz band. When tested using a 10MHz modulation bandwidth OFDMA signal with 64-QAM modulation, the amplifier achieves 29dBm power with less than 2.5% EVM at efficiencies above 21% across the downlink band. Nominal gain is 33dB. Also included on-chip is a CMOS-compatible pin for 15dB attenuation gain control and a buffered RF detector. The amplifier is capable of less than 15uA leakage current in OFF mode. Low-supply voltage operation with a 3.3V is also possible with 25.5dBm of linear output power. The amplifier is fabricated using a proprietary 0.25um E-mode pHEMT technology and is housed in a 5mm × 5mm QFN plastic package.
Keywords :
3G mobile communication; CMOS analogue integrated circuits; OFDM modulation; UHF power amplifiers; frequency division multiple access; quadrature amplitude modulation; 3GPP LTE; 64-QAM modulation; CMOS chips; E-mode pHEMT technology; OFDMA; QFN plastic package; efficiency 21.3 percent; frequency 10 MHz; frequency 700 MHz; gain 15 dB; linear output power amplifier; long term evolution; voltage 5 V; Attenuation; Bandwidth; Downlink; Gain control; Power amplifiers; Power generation; Power supplies; Radio frequency; Radiofrequency amplifiers; Testing;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5518105
