DocumentCode :
3153444
Title :
2007 IEEE International integrated reliability workshop final report
fYear :
2007
fDate :
15-18 Oct. 2007
Abstract :
The following topics are dealt with: negative bias temperature stability; mesurement technique; plasma nitrided pMOSFET; DGO CMOS process; reliability issue; flash memory cell; wafer level electromigration tests; high density flash FPGA devices; semiconductor device scaling.
Keywords :
CMOS integrated circuits; MOSFET; field programmable gate arrays; flash memories; semiconductor device measurement; semiconductor device reliability; semiconductor device testing; thermal stability; CMOS process; electromigration tests; flash memory cell; high density flash FPGA devices; mesurement technique; negative bias temperature stability; plasma nitrided pMOSFET; reliability; semiconductor device scaling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International
Conference_Location :
S. Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-1771-9
Type :
conf
DOI :
10.1109/IRWS.2007.4469205
Filename :
4469205
Link To Document :
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