Title :
Effect of nitrogen on the temperature induced wavelength shift of GaInNAs lasers
Author :
Yong, J.C.L. ; Pozo, J. ; Hill, M. ; Varrazza, R. ; Rorison, J.M. ; Jouthi, T. ; Pessa, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bristol Univ., UK
Abstract :
The temperature dependence of the lasing wavelength of GaInNAs quantum well laser is found to be 0.394 nm/K, which is smaller than conventional InGaAsP material system. The band anticrossing model is utilised to derive an understanding of this effect.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; indium compounds; nitrogen compounds; quantum well lasers; thermo-optical effects; GaInNAs laser; GaInNAs quantum well laser; GaInNa; InGaAsP; InGaAsP material system; band anticrossing model; lasing wavelength; nitrogen; temperature dependence; wavelength shift; Conducting materials; Laser modes; Nitrogen; Optical materials; Pulse measurements; Quantum well lasers; Temperature dependence; Temperature distribution; Temperature measurement; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1312264
