DocumentCode
3153496
Title
InGaAsN/GaAs lasers fabricated with pulsed anodic oxides
Author
Liu, Chongyang ; Wah, Ronnie Tew Jin ; Yuan, Sha ; Wang, S.Z. ; Yoon, S.F.
Author_Institution
Sch. of Mater. Eng., Nanyang Technol. Univ., Singapore
fYear
2003
fDate
22-27 June 2003
Firstpage
205
Lastpage
206
Abstract
InGaAsN/GaAs wafers were grown by molecular beam epitaxy. Rapid thermal annealing of the wafers and photoluminescence measurements were performed. Ridge waveguide lasers with pulsed anodic oxides as the current-blocking layer were fabricated and characterized.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fabrication; photoluminescence; quantum well lasers; rapid thermal annealing; ridge waveguides; waveguide lasers; InGaAsN-GaAs; InGaAsN-GaAs laser fabrication; InGaAsN-GaAs wafer; current-blocking layer; molecular beam epitaxy; photoluminescence measurement; pulsed anodic oxide; rapid thermal annealing; ridge waveguide laser; Gallium arsenide; Molecular beam epitaxial growth; Optical pulses; Performance evaluation; Photoluminescence; Rapid thermal annealing; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312266
Filename
1312266
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