DocumentCode :
3153557
Title :
A Transistor-Level Logic-with-Timing Simulator for MOS Circuits
Author :
Schaefer, Thomas I.
Author_Institution :
VLSI Technology, Inc., San Jose, CA
fYear :
1985
fDate :
23-26 June 1985
Firstpage :
762
Lastpage :
765
Abstract :
VTIsim is a transistor-level simulator for MOS circuits which provides logic simulation together with approximate timing estimates based on layout information. Two novel features enhance the accuracy of simulation: node states are represented as voltages rather than as logic states, and node transitions are modeled as voltage ramps rather than as steps taking place at a fixed instant. This paper describes the major features of the simulator, some issues in its design, and the benefits and problems of using it.
Keywords :
Circuit simulation; Discrete event simulation; Electric resistance; Integrated circuit modeling; Logic circuits; Semiconductor device modeling; Switches; Threshold voltage; Timing; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation, 1985. 22nd Conference on
ISSN :
0738-100X
Print_ISBN :
0-8186-0635-5
Type :
conf
DOI :
10.1109/DAC.1985.1586031
Filename :
1586031
Link To Document :
بازگشت