Enhanced PMOS NBTI degradation due to halo implant channeling

Author

Brisbin, D. ; Yang, J. ; Bahl, S. ; Parker, C.

fYear

2007

fDate

15-18 Oct. 2007

Firstpage

22

Lastpage

26

Abstract

NBTI is a serious reliability concern in state of the art PMOSFET devices. The implementation of nitrided gate oxide to prevent boron penetration has aggravated the NBTI issue. Because of relaxation effects careful stress and measurement techniques ("On-the-Fly") must be used for reliable estimation of device lifetime. This abstract describes a unique enhanced NBTI degradation phenomenon in which NBTI induced V_T degradation was determine to be directly proportional to the initial V_T of the device. Electrical results from special test structures identified halo implant channeling as causing the enhanced NBTI induced degradation behavior.

Keywords

MOSFET; semiconductor device measurement; semiconductor device reliability; PMOSFET devices; boron penetration; device lifetime; halo implant channeling; negative bias temperature instability; relaxation effects; Boron; Degradation; Implants; Life estimation; Lifetime estimation; MOSFET circuits; Measurement techniques; Niobium compounds; Stress; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International

Conference_Location

S. Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-1771-9

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2007.4469215

Filename

4469215