A Unified Behavior Model of Low Noise Amplifier for System-Level Simulation

Author

Hung, Chih-De ; Wuen, Wen-Shen ; Chou, Mei-Fen ; Wen, Kuei-Ann

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu

fYear

2006

fDate

10-12 Sept. 2006

Firstpage

139

Lastpage

142

Abstract

This paper presents a unified RF behavior model that simultaneously predicts the effects of noise, nonlinearity, impedance matching and frequency response and that enables efficient and accurate system simulation. The proposed modeling approach allows characterizing the RF effects incrementally to reduce iteration. A Verilog-A behavior model for an ultra-wideband CMOS low noise amplifier is developed for fast and accurate system simulation. The system simulation results show that the behavior model agrees well with the transistor-level circuit with RMS error less than 0.79%. Ultimately, 87% reduction of simulation time is achieved

Keywords

CMOS integrated circuits; frequency response; impedance matching; integrated circuit modelling; integrated circuit noise; low noise amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; ultra wideband technology; Verilog-A behavior model; frequency response; impedance matching; noise effects; system-level simulation; transistor-level circuit; ultra-wideband CMOS low noise amplifier; unified RF behavior model; Circuit simulation; Frequency response; Hardware design languages; Impedance matching; Low-noise amplifiers; Predictive models; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling; Ultra wideband technology; RF behavior model; low noise amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Technology, 2006. The 9th European Conference on

Conference_Location

Manchester

Print_ISBN

2-9600551-5-2

Type

conf

DOI

10.1109/ECWT.2006.280454

Filename

4057457